该芯片是用于H桥电路，通过变化的占空比对电机进行控制。-The IR2103(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels.

IR的HEXFET功率场效应管IRF1010采用先进的工艺技术制造，具有极低的导通阻抗。-IR HEXFET Power MOSFET IRF1010 manufactured using advanced technology, with very low on-resistance.