This asset originates from the tunneling injection being free of the subthreshold slope limit that fundamentally blocks the MOSFET [3]. Moreover, the limit of low ION in TFETs is wearing off, as drive currents around 100 ìA/ìm have been reported rece

Recent studies have pointed out the benefits of using Silicon Carbide (SiC) devices in photo-voltaic power conversion. In Particular, SiC Power MOSFET technology has greatly advanced over the last years and has presently reached sufficient maturity t