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MI2020initialcode
- Micron MI2020 CMOS SENSOR Initial code
CMOSTrans
- 3 to 5 GHz CMOS Transceiver for DS Ultra Wide Band Systems
241-00698-0-IS61LV6424
- 241-00698-0-IS61LV6424.rar is a 64K x 24 HIGH-SPEED CMOS STATIC RAM.
fi_adc_analog_part
- Design of Folding and Interpolating ADC analog part. Digital Part is in different document mentioned in this document. Design of FI-ADC using CMOS technology
fi_adc_digital_part
- Design of Folding and Interpolating ADC digital part. Analog Part is in different document mentioned in this document. Design of FI-ADC using CMOS technology
folding_ADC_very_important
- Design of FI ADC using CMOS Technology Completely discussed. This is must read file for any one who want to design FI-ADC. Complete flow is given in this document
CMOS-Digital-Isolators-Provide-Data-Protection_WP
- The smart meter market is projected to grow by double digits over the next several years as consumers upgrade from traditional electromechanical meters. Smart meters use the latest integrated circuit (IC) technology to accurately measure and report t
Ultra-thin-SOI-CMOS-technology
- 关于超薄SOI CMOS工艺在未来低功耗和通用SOC应用中挑战和应对方法的读后感想。-On ultra-thin SOI CMOS technology in the future low-power SOC applications and common challenges and our approach to the book review.
Image-Sensor-Principles
- CCD是美国贝尔实验室于1969年发明的，与电脑晶片CMOS技术相似，也可作电脑记忆体及逻辑运作晶片。目前大多数数码相机采用的图像传感器都是CCD。 -CCD invented by Bell Laboratories in the U.S. in 1969, similar to CMOS technology and computer chips, can be used for computer memory and logic operation of the chip. Most di
VLSI_design_CMOS_transistors
- CMOS VLSI Digital Design
Datasheets
- Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF/LG – 4 Meg x 32 x 4 banks TFT-G240320LTSW-118W-E 16-megabit 2.5-volt or 2.7-volt DataFlash K9F1G08X0A S25FL032P S25FL032P Cover Sheet 32-Mbit CMOS 3.0 Volt Flash Memory
EJSR_83_1_05.zip
- Journal on transistor level design of cmos,Journal on transistor level design of cmos
Elonics-E4000-Low-Power-CMOS-Multi-Band-Tuner-Dat
- Elonics E4000 (e4K) RF Tuner IC Comprehensive Manufacturer s Datasheet. Produced only for use by OEM s as Developer/Engineering Documentation I fixed that :) Exactly what the open-source dev s needed to improve the project (rtl2832-sdr
rf018
- cmos model rf this is a 0.18um library for hspice simulation
MI-1310
- MT9M111 1.3MP CMOS camera documents
SerDes
- 12．5 Gb／s半速率时钟数据恢复电路(CDR)的 设计及6．25Gb／s SerDes接收芯片的系统集成，设计工艺均为TSMC 0．189in CMOS工艺。-aspects：Design of Half-rate 1 2．5 Gb／s Clock Data Recovery (CDR)and Integration of 6．25Gb／s SerDes receiver．Both are realized in TSMC 0．1 89m CMOS process．
Short-Channel-Effect-in-CMOS
- Document about short channel effect in CMOS
540f17d00cf2d8daaad097cb[1]===Capsul-cam
- 文章推荐： 采用CMOS探测器，低功耗FPGA、FX2-USB、无线电数据传输等技术，胶囊相机的演示板，非常值得推荐
MOSIS-Scalable-CMOS-(SCMOS)-Design-Rules
- it describes MOSIS Scalable CMOS (SCMOS) Design Rules. very good for mlsi students and developers